Doaa Elsakout

Cairo University, Egypt

Title: Stability characteristics of photo-thermoelastic semiconductors under optoelectronic excitation: A combined asymptotic and perturbation approach

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Biography

Ms Doaa El-Sakout is an applied mathematician from Egypt with a strong passion for teaching and research. She earned her first Bachelor’s degree in Education from Helwan University in 2004, followed by a Bachelor’s degree in Mathematics from Cairo University in 2006, and a Master’s degree in Applied Mathematics in 2010. In 2011, she joined the African Institute for Mathematical Sciences (AIMS) South Africa, where she was inspired by the institute’s interdisciplinary and real-world approach to mathematics. Upon graduation, she was awarded the prestigious Stephen Hawking Scholarship. With support from the Post-AIMS Bursary Programme, Doaa pursued a joint PhD in Applied Mathematics and Petroleum Engineering at Heriot-Watt University in Edinburgh. Her research focuses on mathematical modelling to forecast natural resource availability, particularly in the petroleum sector. She aspires to return to Africa and contribute her expertise to sustainable development through applied mathematics.

Abstract

In this study, the stability of a coupled photo-thermoelastic semiconductor system is analyzed using the combined Routh-Hurwitz criterion and perturbation theory.The Routh method identifies stability domains directly from the eigenvalue spectrum, focusing on the real part as the key factor governing the transition between stable and unstable states. Perturbation analysis validates these conditions and describes the temporal and spatial behavior of temperature, carrier density, and elastic fields. Numerical simulations and 3D stability maps are presented for the thermoelectric ???? , thermo-energy ???? , and thermoelastic ???? ,  coefficients. The results reveal that thermoelastic coupling exerts the strongest destabilizing influence, while negative eigenvalues ensure asymptotic stability. The study provides a unified analytical–numerical framework for predicting stability in photothermoelastic semiconductors and guiding the design of reliable optoelectronic and energy conversion devices.